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| BP 103 NPN-Silizium-Fototransistor Silicon NPN Phototransistor BP 103 Mae in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale q Speziell geeignet fur Anwendungen im Bereich von 420 nm bis 1130 nm q Hohe Linearitat q TO-18, Bodenplatte, klares EpoxyGieharz, mit Basisanschlu Anwendungen q Computer-Blitzlichtgerate q Lichtschranken fur Gleich- und Wechsellichtbetrieb q Industrieelektronik q "Messen/Steuern/Regeln" Typ Type BP 103 BP 103-2 BP 103-3 BP 103-4 BP 1) 1) Features q Especially suitable for applications from 420 nm to 1130 nm q High linearity q TO-18, base plate, transparent epoxy resin lens, with base connection Applications q Computer-controlled flashes q Photointerrupters q Industrial electronics q For control and drive circuits Bestellnummer Ordering Code Q62702-P75 Q62702-P79-S1 Q62702-P79-S2 Q62702-P79-S4 Q 62702-P781 103-51) Lieferung in dieser Gruppe kann wegen Ausbeuteschwankungen nicht immer sichergestellt werden. Wir behalten uns in diesem Fall die Lieferung einer Ersatzgruppe vor. Supplies out of this group cannot always be guaranteed due to unforseeable spread of yield. In this case we will reserve us the right of delivering a substitute group. Semiconductor Group 211 10.95 fet06017 BP 103 Grenzwerte Maximum Ratings Bezeichnung Description Betriebs- und Lagertemperatur Operating and storage temperature range Lottemperatur bei Tauchlotung Lotstelle 2 mm vom Gehause, Lotzeit t 5 s Dip soldering temperature, 2 mm distance from case bottom t 5 s Lottemperatur bei Kolbenlotung Lotstelle 2 mm vom Gehause, Lotzeit t 3 s Iron soldering temperature, 2 mm distance from case bottom t 3 s Kollektor-Emitterspannung Collector-emitter voltage Kollektorstrom Collector current Kollektorspitzenstrom, < 10 s Collector surge current Emitter-Basisspannung Emitter -base voltage Verlustleistung, TA = 25 C Total power dissipation Warmewiderstand Thermal resistance Symbol Symbol Wert Value - 40 ... + 80 260 Einheit Unit C C Top; Tstg TS TS 300 C VCE IC ICS VEB Ptot RthJA 50 100 200 7 150 500 V mA mA V mW K/W Semiconductor Group 212 BP 103 Kennwerte (TA = 25 C, = 950 nm) Characteristics Bezeichnung Description Wellenlange der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit S = 10 % von Smax Spectral range of sensitivity S = 10 % of Smax Bestrahlungsempfindliche Flache Radiant sensitive area Abmessungen der Chipflache Dimensions of chip area Abstand Chipoberflache zu Gehauseoberflache Distance chip front to case surface Halbwinkel Half angle Fotostrom der Kollektor-Basis-Fotodiode Photocurrent of collector-base photodiode Ee = 0.5 mW/cm2, VCB = 5 V Ev = 1000 Ix, Normlicht/standard light a VCB = 5 V Kapazitat Capacitance VCE = 0 V, f = 1 MHz, E = 0 VCB = 0 V, f = 1 MHz, E = 0 VEB = 0 V, f = 1 MHz, E = 0 Dunkelstrom Dark current VCE = 35 V, E = 0 Symbol Symbol S max Wert Value 850 420 ... 1130 Einheit Unit nm nm A Lx B LxW H 0.12 0.5 x 0.5 0.2 ... 0.8 mm2 mm x mm mm 55 Grad deg. IPCB IPCB 0.9 2.7 A A CCE CCB CEB ICEO 8 11 19 5 ( 100) pF pF pF nA Semiconductor Group 213 BP 103 Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen Ziffern gekennzeichnet. The phototransistors are grouped according to their spectral sensitivity and distinguished by arabian figures. Bezeichnung Description Fotostrom, = 950 nm Photocurrent Ee = 0.5 mW/cm2, VCE = 5 V Ev = 1000 Ix. Normlicht/standard light A VCE = 5 V Anstiegszeit/Abfallzeit Rise and fall time IC = 1 mA, VCC = 5 V, RL = 1 k Kollektor-EmitterSattigungsspannung Collector-emitter saturation voltage IC = IPCEmin1) x 0.3 Ee = 0.5 mW/cm2 Stromverstarkung Current gain Ee = 0.5 mW/cm2, VCE = 5 V 1) 1) Symbol Symbol -2 -3 Wert Value -4 -5 Einheit Unit IPCE 80 ... 160 125 ... 250 200 ... 400 320 A IPCE tr, tf 0.38 5 0.6 7 0.95 9 1.4 12 mA s VCEsat 150 150 150 150 mV IPCE IPCB 140 210 340 530 IPCEmin ist der minimale Fotostrom der jeweiligen Gruppe IPCEmin is the min. photocurrent of the specified group Semiconductor Group 214 BP 103 Relative spectral sensitivity Srel = f () Photocurrent IPCE = f (Ee), VCE = 5 V Total power dissipation Ptot = f (TA) Output characteristics IC = f (VCE), IB = Parameter Output characteristics IC = f (VCE), IB = Parameter Dark current ICEO = f (VCE), E = 0 Photocurrent IPCE/IPCE25o = f (TA), VCE = 5 V Dark current ICEO/ICEO25o = f (TA), VCE = 25 V, E = 0 Collector-emitter capacitance CCE = f (VCE), f = 1 MHz, E = 0 Semiconductor Group 215 BP 103 Collector-emitter capacitance CCB = f (VCB), f = 1 MHz, E = 0 Emitter-base capacitance CEB = f (VEB), f = 1 MHz, E = 0 Directional characteristics Srel = f () Semiconductor Group 216 |
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